HXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low Noise

Product Summary

General Description

The HXY4466 uses advanced trench technology to

provide excellent RDS(ON) and low gate charge. This

device is suitable for use as a load switch or in PWM

applications. The source leads are separated to allow

a Kelvin connection to the source, which may be

used to bypass the source inductance.

Electrical Characteristics (T =25°C unless otherwise noted)

A. The value of R_θJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with T_A =25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation P_D is based on T_J(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature T_J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initialT =25°C.

D. The R_θJA is the sum of the thermal impedance from junction to lead R_θJL and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in² FR-4 board with

2oz. Copper, assuming a maximum junction temperature of T_J(MAX)=150°C. The SOA curve provides a single pulse rating.

G. The spike duty cycle 5% max, limited by junction temperature TJ(MAX)=125°C.

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

logic mosfet switch

mosfet driver using transistor

HXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low Noise Images