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A94 PNP Tip Power Transistors Fast Switching Silicon Semiconductor Triode Type

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A94 PNP Tip Power Transistors Fast Switching Silicon Semiconductor Triode Type

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : A94

VCBO : -400V

VCEO : -400V

VEBO : -5V

Product name : silicon semiconductor triode type

Tj : 150Š

Power Mosfet Transistor : TO-92 Plastic-Encapsulate

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TO-92 Plastic-Encapsulate Transistors A94 TRANSISTOR (PNP)

FEATURE

High Breakdown Voltage

MARKING

A94=Device code

Solid dot=Green molding compound device, if none,the normal device

Z=Rank of hFE

XXX=Code

A94 PNP Tip Power Transistors Fast Switching Silicon Semiconductor Triode Type

ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity
A94 TO-92 Bulk 1000pcs/Bag
A94-TA TO-92 Tape 2000pcs/Box


MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

Symbol Parameter Value Unit
VCBO Coll ector-Base Voltage -400 V
VCEO Coll ector-Emitter Voltage -400 V
VEBO Emitter-Base Voltage -5 V
IC Coll ector Current -Continuous -0.2 A
ICM Coll ector Current -Pulsed -0.3 A
PC Coll ector Power Dissipation 625 mW
RθJA Thermal Resist ance From Junction To ambient 200 ℃ /W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55~+150 ℃


ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified


Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=-100µA,IE=0 -400 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -400 V
Emitter-base breakdown voltage V(BR)EBO IE=-100µA,IC=0 -5 V
Collector cut-off current ICBO VCB=-400V,IE=0 -0.1 μA
Collector cut-off current ICEO VCE=-400V,IB=0 -5 μA
Emitter cut-off current IEBO VEB=-4V,IC=0 -0.1 μA

DC current gain

 hFE(1) VCE=-10V, IC=-10mA 80 300
hFE(2) VCE=-10V, IC=-1mA 70
hFE(3) VCE=-10V, IC=-100mA 60
hFE(4) VCE=-10V, IC=-50mA 80

Collector-emitter saturation voltage

 VCE(sat)(1) IC=-10mA,IB=-1mA -0.2 V
VCE(sat)(2) IC=-50mA,IB=-5mA -0.3 V
Base-emitter saturation voltage VBE(sat) IC=-10mA,IB=-1mA -0.75 V
Transition frequency fT VCE=-20V, IC=-10mA,f=30MHz 50 MHz


CLASSIFICATION OF hFE(2)

RANK A B C
RANGE 80-100 100-200 200-300

Typical Characteristics

A94 PNP Tip Power Transistors Fast Switching Silicon Semiconductor Triode Type

A94 PNP Tip Power Transistors Fast Switching Silicon Semiconductor Triode Type

A94 PNP Tip Power Transistors Fast Switching Silicon Semiconductor Triode Type

A94 PNP Tip Power Transistors Fast Switching Silicon Semiconductor Triode Type

Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 3.300 3.700 0.130 0.146
A1 1.100 1.400 0.043 0.055
b 0.380 0.550 0.015 0.022
c 0.360 0.510 0.014 0.020
D 4.300 4.700 0.169 0.185
D1 3.430 0.135
E 4.300 4.700 0.169 0.185
e 1.270 TYP 0.050 TYP
e1 2.440 2.640 0.096 0.104
L 14.100 14.500 0.555 0.571
0 1.600 0.063
h 0.000 0.380 0.000 0.015




Product Tags:

tip pnp transistor

      

tip series transistors

      
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