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3DD13003B Tip Power Transistors Emitter Base Voltage 9v Low Rdson

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3DD13003B Tip Power Transistors Emitter Base Voltage 9v Low Rdson

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : 3DD13003B

Collector-Base Voltage : 700V

Collector-Emitter Voltage : 400V

Emitter-Base Voltage : 9V

Product name : semiconductor triode type

Tj : 150℃

Type : Triode Transistor

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TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR (NPN)

FEATURE

Ÿ power switching applications

MARKING

13003B=Device code

Solid dot=Green molding compound device, if none,the normal device

XXX=Code

3DD13003B Tip Power Transistors Emitter Base Voltage 9v Low Rdson

ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity
3DD13003B TO-92 Bulk 1000pcs/Bag
3DD13003B-TA TO-92 Tape 2000pcs/Box


MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

Symbol Parameter Value Unit
V CBO Collector-Base Voltage 700 V
V CEO Collector-Emitter Voltage 400 V
V EBO Emitter-Base Voltage 9 V
IC Collector Current -Continuous 1.5 A
PC Collector Power Dissipation 0.9 W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55 ~150 ℃


ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified


Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC= 1mA, IE=0 700 V
Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, IB=0 400 V
Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC=0 9 V
Collector cut-off current ICBO VCB= 700V, IE=0 100 µA
Collector cut-off current ICEO VCE= 400V, IB=0 50 µA
Emitter cut-off current IEBO VEB= 7V, IC=0 10 µA
DC current gain hFE VCE= 10V, IC= 0.4 A 20 40

Collector-emitter saturation voltage

 VCE(sat)1 IC=1.5A,IB= 0.5A 3 V
VCE(sat)2 IC=0.5A, IB= 0.1A 0.8 V
Base-emitter saturation voltage VBE(sat) IC=0.5A, IB=0.1A 1 V
Transition Frequency fT VCE=10V,IC=100mA, f =1MHz 4 MHz
Fall time tf IC=1A 0.7 µs
Storage time ts IB1=-IB2=0.2A 4 µs


CLASSIFICATION OF hFE(2)

Rank
Range 20-25 25-30 30-35 35-40

Typical Characteristics

3DD13003B Tip Power Transistors Emitter Base Voltage 9v Low Rdson3DD13003B Tip Power Transistors Emitter Base Voltage 9v Low Rdson3DD13003B Tip Power Transistors Emitter Base Voltage 9v Low Rdson3DD13003B Tip Power Transistors Emitter Base Voltage 9v Low Rdson

TO-92 Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 3.300 3.700 0.130 0.146
A1 1.100 1.400 0.043 0.055
b 0.380 0.550 0.015 0.022
c 0.360 0.510 0.014 0.020
D 4.300 4.700 0.169 0.185
D1 3.430 0.135
E 4.300 4.700 0.169 0.185
e 1.270 TYP 0.050 TYP
e1 2.440 2.640 0.096 0.104
L 14.100 14.500 0.555 0.571
Φ 1.600 0.063
h 0.000 0.380 0.000 0.015




Product Tags:

tip series transistors

      

high power pnp transistor

      
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