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AlphaSGT HXY4266 Mos Field Effect Transistor 60v Logic Level Gate Drive

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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AlphaSGT HXY4266 Mos Field Effect Transistor 60v Logic Level Gate Drive

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : HXY4266

Product name : Mosfet Power Transistor

Application : High Frequency Switching

Material : Silicon

VDS : 60V

ID (at VGS=10V) : 11A

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60V N-Channel AlphaSGT HXY4266

Product Summary

VDS 60V
ID (at VGS=10V) 11A
RDS(ON) (at VGS=10V) < 13.5mΩ
RDS(ON) (at VGS=4.5V) < 18mΩ

General Description

• Low RDS(ON)
• Logic Level Gate Drive
• Excellent Gate Charge x RDS(ON) Product (FOM)
• RoHS and Halogen-Free Compliant

Applications

• High Frequency Switching and Synchronous Rectification

AlphaSGT HXY4266 Mos Field Effect Transistor 60v Logic Level Gate Drive

Electrical Characteristics (T =25°C unless otherwise noted)

AlphaSGT HXY4266 Mos Field Effect Transistor 60v Logic Level Gate Drive

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initialT =25°C.

D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with

2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

G. The spike duty cycle 5% max, limited by junction temperature TJ(MAX)=125°C.

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

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AlphaSGT HXY4266 Mos Field Effect Transistor 60v Logic Level Gate Drive


Product Tags:

high current transistor

      

mosfet driver using transistor

      
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